Diodes Incorporated DMG1016UDW-7 MOSFET Small Signals 20V Vdss 6V VGSS Complementary Pair

Fall Time: 12.3 ns, 20.72 ns

Rise Time: 7.4 ns, 8.1 ns

Technology: Si

Unit Weight: 7.500 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 736.6 nC, 622.4 pC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 330 mW

Vgs - Gate-Source Voltage: - 6 V, + 6 V

Typical Turn-On Delay Time: 5.1 ns, 5.1 ns

Typical Turn-Off Delay Time: 26.7 ns, 28.4 ns

Id - Continuous Drain Current: 1.066 A, 845 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 450 mOhms, 750 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 500 mV