Diodes Incorporated DMG1013TQ-7 MOSFETs MOSFET BVDSS: 8V-24V SOT523 T&R 3K

Technology: Si

Unit Weight: 2 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Qg - Gate Charge: 580 pC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 270 mW

Vgs - Gate-Source Voltage: - 6 V, + 6 V

Id - Continuous Drain Current: 460 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.3 Ohms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V