Diodes Incorporated DMG1012T-7 MOSFET Small Signals MOSFET N-CHANNEL SOT-523

Fall Time: 12.3 ns

Rise Time: 7.4 ns

Technology: Si

Unit Weight: 2 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 736.6 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 280 mW

Vgs - Gate-Source Voltage: - 6 V, + 6 V

Typical Turn-On Delay Time: 5.1 ns

Typical Turn-Off Delay Time: 26.7 ns

Id - Continuous Drain Current: 630 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 400 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 500 mV