Diodes Incorporated DMC3730UFL3-7 MOSFETs MOSFET BVDSS: 25V-30V

Technology: Si

Unit Weight: 2 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 900 pC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 810 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Id - Continuous Drain Current: 1.1 A, 700 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 460 mOhms, 1 Ohms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 450 mV, 1.1 V