Diodes Incorporated DMC2710UV-7 MOSFETs MOSFET BVDSS: 8V-24V SOT563 T&R 3K

Fall Time: 174 ns, 445 ns

Rise Time: 3.1 ns, 2.8 ns

Technology: Si

Unit Weight: 6 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 600 pC, 700 pC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 460 mW

Vgs - Gate-Source Voltage: - 6 V, + 6 V

Typical Turn-On Delay Time: 4.9 ns, 5.3 ns

Typical Turn-Off Delay Time: 386 ns, 1247 ns

Id - Continuous Drain Current: 1.1 A, 800 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 50 C

Rds On - Drain-Source Resistance: 400 mOhms, 700 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V