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Width: 1.35 mm
Height: 1 mm
Length: 2.2 mm
Technology: Si
Unit Weight: 7.500 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 250 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Id - Continuous Drain Current: 540 mA, 430 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Rds On - Drain-Source Resistance: 550 mOhms, 900 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 500 mV, 1 V
