Diodes Incorporated AC848BQ-13 BJTs - Bipolar Transistors General Purpose Transistor SOT23 T&R 10K

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 350 mW

DC Current Gain hFE Max: 520 mA

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 290 mA

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 200 mV