Diodes Incorporated 2DD2656-7 BJTs - Bipolar Transistors LOW VSAT NPN SMT 3K

Width: 1.3 mm

Height: 1 mm

Length: 2.15 mm

Technology: Si

Unit Weight: 5 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 270 at 100 mA, 2 V

Gain Bandwidth Product fT: 270 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 30 V

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 270 at 100 mA, 2 V

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 350 mV