Diodes Incorporated 2DB1184Q-13 BJTs - Bipolar Transistors PNP 2.5K BIPOLAR

Width: 6.2 mm

Height: 2.4 mm

Length: 6.8 mm

Technology: Si

Unit Weight: 260.400 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 15 W

DC Current Gain hFE Max: 120

Gain Bandwidth Product fT: 110 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 1 V