Diodes Incorporated 2DB1182Q-13 BJTs - Bipolar Transistors 32V PNP Trans -40V 10W -32V VCEO -2A

Technology: Si

Unit Weight: 330 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 10 W

DC Current Gain hFE Max: 270 at - 500 mA, - 3 V

Gain Bandwidth Product fT: 110 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 32 V

Collector-Emitter Saturation Voltage: 800 mV