Comchip Technology AMJD31C-HF BJTs - Bipolar Transistors AUTOMOTIVE TRANS SILICON EPITAXIAL PLANAR NPN 100V 3A

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.25 W

DC Current Gain hFE Max: 75

Gain Bandwidth Product fT: 3 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 15

Collector-Emitter Saturation Voltage: 1.2 V