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Width: 1.35 mm
Height: 1.1 mm
Length: 2.2 mm
Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 200 mW
DC Current Gain hFE Max: 475
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 30 V
Continuous Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Collector-Emitter Saturation Voltage: 650 mV
