Central Semiconductor PN5129 PBFREE BJTs - Bipolar Transistors NPN 15Vcbo 12Vceo 3.0Vebo 150mA 10pF
ModelPN5129 PBFREE
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
DC Current Gain hFE Max: 350 at 10 V, 50 mA
Emitter- Base Voltage VEBO: 3 V
Collector- Base Voltage VCBO: 15 V
DC Collector/Base Gain hfe Min: 35 at 10 V, 50 mA
Collector-Emitter Saturation Voltage: 250 mV
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