Central Semiconductor MPSL51 TIN/LEAD BJTs - Bipolar Transistors PNP 100Vcbo 100Vceo 5.0Vebo 60mA 8pF
ModelMPSL51 TIN/LEAD
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
DC Current Gain hFE Max: 250 at 5 V, 50 mA
Gain Bandwidth Product fT: 60 MHz
Emitter- Base Voltage VEBO: 4 V
Collector- Base Voltage VCBO: 100 V
DC Collector/Base Gain hfe Min: 40 at 5 V, 50 mA
Collector-Emitter Saturation Voltage: 300 mV
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