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Central Semiconductor MPSL51 TIN/LEAD BJTs - Bipolar Transistors PNP 100Vcbo 100Vceo 5.0Vebo 60mA 8pF

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Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

DC Current Gain hFE Max: 250 at 5 V, 50 mA

Gain Bandwidth Product fT: 60 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 100 V

DC Collector/Base Gain hfe Min: 40 at 5 V, 50 mA

Collector-Emitter Saturation Voltage: 300 mV

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