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Central Semiconductor MPSL01 PBFREE BJTs - Bipolar Transistors NPN 140Vcbo 120Vceo 5.0Vebo 50mA 8pF

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Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

DC Current Gain hFE Max: 300 at 5 V, 10 mA

Gain Bandwidth Product fT: 60 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 140 V

DC Collector/Base Gain hfe Min: 50 at 5 V, 10 mA

Collector-Emitter Saturation Voltage: 300 mV

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