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Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 625 mW
Gain Bandwidth Product fT: 125 MHz
Emitter- Base Voltage VEBO: 10 V
Collector- Base Voltage VCBO: 30 V
Continuous Collector Current: 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 10000 at 5 V, 100 mA
Collector- Emitter Voltage VCEO Max: 30 V
