Central Semiconductor MPS5306 TIN/LEAD BJTs - Bipolar Transistors NPN 25Vcbo 25Vceo 12Vebo 10pF
ModelMPS5306 TIN/LEAD
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
DC Current Gain hFE Max: 70000
Gain Bandwidth Product fT: 60 MHz
Emitter- Base Voltage VEBO: 12 V
Collector- Base Voltage VCBO: 25 V
DC Collector/Base Gain hfe Min: 7000
Collector- Emitter Voltage VCEO Max: 25 V
Collector-Emitter Saturation Voltage: 1.4 V
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