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Central Semiconductor MPS3826 PBFREE BJTs - Bipolar Transistors NPN 60Vcbo 45Vceo 4.0Vebo 10mA

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Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

DC Current Gain hFE Max: 160 at 10 V, 10 mA

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 60 V

DC Collector/Base Gain hfe Min: 40 at 10 V, 10 mA

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