Central Semiconductor MPS3708 TIN/LEAD BJTs - Bipolar Transistors NPN 30Vcbo 30Vceo 6.0Vebo 1.0mA
ModelMPS3708 TIN/LEAD
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
DC Current Gain hFE Max: 660 at 5 V, 1 mA
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 30 V
DC Collector/Base Gain hfe Min: 45 at 5 V, 1 mA
Collector-Emitter Saturation Voltage: 1 V
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