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Central Semiconductor MPS3702 TIN/LEAD BJTs - Bipolar Transistors PNP 40Vcbo 25Vceo 5.0Vebo 50mA 12pF

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Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

DC Current Gain hFE Max: 300 at 5 V, 50 mA

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

DC Collector/Base Gain hfe Min: 60 at 5 V, 50 mA

Collector-Emitter Saturation Voltage: 250 mV

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