Central Semiconductor CMXT3946 TR TIN/LEAD BJTs - Bipolar Transistors 60Vcbo 40Vceo 5.0Vebo 200mA 350mW

Technology: Si

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 350 mW

DC Current Gain hFE Max: 300

Gain Bandwidth Product fT: 250 MHz, 300 MHz

Emitter- Base Voltage VEBO: 5 V, 6 V

Collector- Base Voltage VCBO: 60 V, 40 V

Continuous Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 100

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 200 mV, 250 mV