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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: P-Channel
Pd - Power Dissipation: 350 mW
Gate-Source Cutoff Voltage: 1 V to 4 V
Maximum Drain Gate Voltage: 30 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Rds On - Drain-Source Resistance: 250 Ohms
Vgs - Gate-Source Breakdown Voltage: 30 V
Vds - Drain-Source Breakdown Voltage: 15 V
