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Technology: Si
Unit Weight: 8 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Pd - Power Dissipation: 350 mW
Drain-Source Current at Vgs=0: 5 mA to 30 mA
Id - Continuous Drain Current: 50 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 100 Ohms
Vgs - Gate-Source Breakdown Voltage: 40 V
Vds - Drain-Source Breakdown Voltage: 40 V
