Central Semiconductor BCY58-VIII PBFREE BJTs - Bipolar Transistors NPN 32Vcbo 7.0Vebo 100mA 340mW 1W
ModelBCY58-VIII PBFREE
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Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 340 mW
Gain Bandwidth Product fT: 150 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 32 V
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
Collector- Emitter Voltage VCEO Max: 32 V
Collector-Emitter Saturation Voltage: 700 mV
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