Central Semiconductor BC107 TIN/LEAD BJTs - Bipolar Transistors NPN 50Vcbo 45Vceo 6.0Vebo 200mA 600Pd

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 600 mW

DC Current Gain hFE Max: 450 at 2 mA, 5 V

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 200 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 110 at 2 mA, 5 V

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 250 mV