Central Semiconductor 2SC1815 PBFREE BJTs - Bipolar Transistors 60Vcbo 50Vceo 5.0V 150mA 400mA 400mW

Unit Weight: 1.788 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 400 mW

DC Current Gain hFE Max: 700

Gain Bandwidth Product fT: 80 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 150 mA

Maximum DC Collector Current: 150 mA

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 70

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 250 mV