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Central Semiconductor 2N698 PBFREE BJTs - Bipolar Transistors NPN 120Vcbo 60Vceo 7.0Vebo 15pF

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Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

DC Current Gain hFE Max: 60 at 150 mA, 10 V

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 120 V

DC Collector/Base Gain hfe Min: 20 at 150 mA, 10 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 1.5 V

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