Central Semiconductor 2N696 TIN/LEAD BJTs - Bipolar Transistors NPN 60Vcbo 40Vcer 5.0Vebo 2.0W 35pF
Model2N696 TIN/LEAD
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 600 mW
DC Current Gain hFE Max: 60
Gain Bandwidth Product fT: 40 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 60 V
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 20
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 1.5 V
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