Central Semiconductor 2N6299 TIN/LEAD BJTs - Bipolar Transistors Vcbo 80V Vceo 80V 5.0VA 120mA 75W

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 75 W

DC Current Gain hFE Max: 18000 at 4 A, 3 V

Gain Bandwidth Product fT: 4 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 8 A

Maximum DC Collector Current: 16 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 750 at 4 A, 3 V

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 2 V