Central Semiconductor 2N5963 TIN/LEAD BJTs - Bipolar Transistors NPN 30Vcbo 30Vceo 7.0Vebo 50mA 625mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 2200 at 10 mA, 5 V

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 50 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 900 at 10 uA, 5 V

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 200 mV