Central Semiconductor 2N5880 PBFREE BJTs - Bipolar Transistors 80V 15A PNP

Unit Weight: 6.401 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 160 W

DC Current Gain hFE Max: 100

Gain Bandwidth Product fT: 4 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 15 A

Maximum DC Collector Current: 15 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 20

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 4 V