Central Semiconductor 2N5822 TIN/LEAD BJTs - Bipolar Transistors 70Vcbo 70Vces 60Vceo 5.0V 750mA 625wW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 250 at 2 mA, 2 V

Gain Bandwidth Product fT: 120 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 70 V

Continuous Collector Current: 750 mA

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 100 at 2 mA, 2 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 1.2 V