Central Semiconductor 2N5769 TIN/LEAD BJTs - Bipolar Transistors NPN 40Vcbo 40Vces 15Vceo 4.5Vebo 350mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 350 mW

DC Current Gain hFE Max: 120 at 0.35 V, 10 mA

Gain Bandwidth Product fT: 500 MHz

Emitter- Base Voltage VEBO: 4.5 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 200 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 20 at 1 V, 100 mA

Collector- Emitter Voltage VCEO Max: 15 V

Collector-Emitter Saturation Voltage: 500 mV