Central Semiconductor 2N5682 TIN/LEAD BJTs - Bipolar Transistors NPN 100Vcbo 100Vceo 4.0Vebo 1.0A 1.0W

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 10 W

DC Current Gain hFE Max: 150 at 250 mA, 2 V

Gain Bandwidth Product fT: 30 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: 1 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40 at 250 mA, 2 V

Collector- Emitter Voltage VCEO Max: 120 V

Collector-Emitter Saturation Voltage: 600 mV