Central Semiconductor 2N5429 TIN/LEAD BJTs - Bipolar Transistors NPN 100Vcbo 100Vceo 7.0A 40W 0.7Vce
Model2N5429 TIN/LEAD
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 40 W
DC Current Gain hFE Max: 120
Gain Bandwidth Product fT: 30 MHz
Collector- Base Voltage VCBO: 100 V
Continuous Collector Current: 7 A
DC Collector/Base Gain hfe Min: 30
Collector- Emitter Voltage VCEO Max: 100 V
Collector-Emitter Saturation Voltage: 700 mV
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