Central Semiconductor 2N5356 APM PBFREE BJTs - Bipolar Transistors PNP 25Vcbo 25Vceo 4.0Vebo 350mA 360mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 360 mW

DC Current Gain hFE Max: 500 at 1 V, 50 mA

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 25 V

Continuous Collector Current: 350 mA

Maximum DC Collector Current: 700 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 200 at 10 V, 2 mA

Collector- Emitter Voltage VCEO Max: 25 V

Collector-Emitter Saturation Voltage: 1 V