Central Semiconductor 2N5306 TIN/LEAD BJTs - Bipolar Transistors NPN 25Vcbo 25Vceo 12Vebo 300mA 625mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 70000 at 2 mA, 5 V

Gain Bandwidth Product fT: 60 MHz

Emitter- Base Voltage VEBO: 12 V

Collector- Base Voltage VCBO: 25 V

Continuous Collector Current: 300 mA

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 7000 at 2 mA, 5 V

Collector- Emitter Voltage VCEO Max: 25 V

Collector-Emitter Saturation Voltage: 1.4 V