Central Semiconductor 2N5227 TIN/LEAD BJTs - Bipolar Transistors PNP 30Vcbo 30Vceo 3.0Vebo 10mA 10pF
Model2N5227 TIN/LEAD
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
DC Current Gain hFE Max: 700 at 10 V, 2 mA
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 3 V
Collector- Base Voltage VCBO: 30 V
DC Collector/Base Gain hfe Min: 50 at 10 V, 2 mA
Collector-Emitter Saturation Voltage: 400 mV
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