Central Semiconductor 2N5087 PBFREE BJTs - Bipolar Transistors PNP Gen Pur SS

Unit Weight: 453.600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 800

Gain Bandwidth Product fT: 40 MHz

Emitter- Base Voltage VEBO: 3 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 50 mA

Maximum DC Collector Current: 50 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 250

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 300 mV