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Technology: Si
Unit Weight: 431.107 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 mW
Gate-Source Cutoff Voltage: 6 V
Drain-Source Current at Vgs=0: 15 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
Vgs - Gate-Source Breakdown Voltage: 35 V
Vds - Drain-Source Breakdown Voltage: 35 V
