Central Semiconductor 2N4240 TIN/LEAD BJTs - Bipolar Transistors 500Vcbo 300Vceo 1.0Vce 2.0A 15Mhz
Model2N4240 TIN/LEAD
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 35 W
Gain Bandwidth Product fT: 15 MHz
Collector- Base Voltage VCBO: 500 V
Continuous Collector Current: 2 A
DC Collector/Base Gain hfe Min: 40
Collector- Emitter Voltage VCEO Max: 300 V
Collector-Emitter Saturation Voltage: 1 V
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