Central Semiconductor 2N4030 TIN/LEAD BJTs - Bipolar Transistors PNP 60Vcbo 60Vceo 5.0Vebo 20pF
Model2N4030 TIN/LEAD
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
DC Current Gain hFE Max: 120
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 60 V
DC Collector/Base Gain hfe Min: 40
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 500 mV
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