Central Semiconductor 2N3962 TIN/LEAD BJTs - Bipolar Transistors PNP 60Vcbo 60Vceo 6.0Vebo 6.0pF
Model2N3962 TIN/LEAD
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
Pd - Power Dissipation: 360 mW
DC Current Gain hFE Max: 450
Gain Bandwidth Product fT: 40 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 60 V
Continuous Collector Current: 200 mA
DC Collector/Base Gain hfe Min: 100
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 250 mV
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