Central Semiconductor 2N3906 TRA PBFREE BJTs - Bipolar Transistors PNP 40Vcbo 40Vceo 5.0Vebo 200mA 625mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 300 at 1 V, 10 mA

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 100 at 10 V, 1 mA

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 400 mV