Central Semiconductor 2N3799A TIN/LEAD BJTs - Bipolar Transistors PNP 90Vcbo 90Vceo 5.0Vebo 4.0pF
Model2N3799A TIN/LEAD
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
DC Current Gain hFE Max: 900
Gain Bandwidth Product fT: 30 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 90 V
DC Collector/Base Gain hfe Min: 300
Collector- Emitter Voltage VCEO Max: 90 V
Collector-Emitter Saturation Voltage: 250 mV
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