Central Semiconductor 2N3741A TIN/LEAD BJTs - Bipolar Transistors PNP 80Vcbo 80Vceo 7.0Vebo 4.0A 25W

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 25 W

DC Current Gain hFE Max: 200 at 250 mA, 1 V

Gain Bandwidth Product fT: 4 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 4 A

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40 at 100 mA, 1 V

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 600 mV