Central Semiconductor 2N3495 TIN/LEAD BJTs - Bipolar Transistors 120Vcbo 120Vceo 4.5Vebo 100mA 0.6W

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 600 mW

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 4.5 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 35 at 100 uA, 10 V

Collector- Emitter Voltage VCEO Max: 120 V

Collector-Emitter Saturation Voltage: 350 mV