Central Semiconductor 2N2925 PBFREE BJTs - Bipolar Transistors NPN Gen Pur SS

Unit Weight: 453.600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 360 mW

DC Current Gain hFE Max: 470

Gain Bandwidth Product fT: 160 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 25 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 235

Collector- Emitter Voltage VCEO Max: 25 V