Central Semiconductor 2N1131B TIN/LEAD BJTs - Bipolar Transistors PNP 50Vcbo 35Vceo 5.0Vebo 45pF
Model2N1131B TIN/LEAD
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
DC Current Gain hFE Max: 45 at 150 mA, 10 V
Gain Bandwidth Product fT: 50 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 50 V
DC Collector/Base Gain hfe Min: 20 at 150 mA, 10 V
Collector- Emitter Voltage VCEO Max: 35 V
Collector-Emitter Saturation Voltage: 1.5 V
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