Bourns BIDW40N65ES5 IGBT Transistors IGBT Discrete 650V, 40A, Medium speed switching in TO-247-3L
ManufacturerBourns(View more products from this manufacturer)
ModelBIDW40N65ES5
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 230 W
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 650 V
Continuous Collector Current Ic Max: 80 A
Collector-Emitter Saturation Voltage: 1.35 V
Continuous Collector Current at 25 C: 80 A
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